Challenges for Nanoscale MOSFETs and Emerging Nanoelectronics
نویسندگان
چکیده
منابع مشابه
Review Paper: Challenges for Nanoscale MOSFETs and Emerging Nanoelectronics
Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main key for continuous progress in silicon-based semiconductor industry over the past three decades. However, as the technology scaling enters nanometer regime, CMOS devices are facing many serious problems such as increased leakage currents, difficulty on increase of on-current, large parameter variations, low reliab...
متن کاملModelling and simulation challenges for nanoscale MOSFETs in the ballistic limit
In this paper, we present the main issues and the modelling approaches for the simulation of nanoscale MOSFETs in which transport is dominated by ballistic electrons. We show that is indeed possible to compute in an accurate way the density of states in the channel in the case of quantum confinement without solving the complete two-dimensional Schr€ odinger equation. We are developing modelling...
متن کاملTransport enhancement techniques for nanoscale MOSFETs
Over the past two decades, intrinsic MOSFET delay has been scaled commensurate with the scaling of the dimensions. To extend this historical trend in the future, careful analysis of what determines the transistor performance is required. In this work, a new delay metric is first introduced that better captures the interplay of the main technology parameters, and employed to study the historical...
متن کاملNanoelectronics challenges for the 21st century
Leading edge CMOS technologies today are unique examples of nanoscale engineering at an industrial scale. As we celebrate this remarkable achievement of our industry that forms the ever-expanding technology basis of modern society we cannot help but ponder the question of how we can continue to push the envelope of nanoelectronics. With the end of Si FET scaling appearing increasingly near, sea...
متن کاملNanoscale Mosfets: Physics, Simulation and Design
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer aided design) tool for quantum level device simulation, 3) examination and assessment of new features of ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Transactions on Electrical and Electronic Materials
سال: 2010
ISSN: 1229-7607
DOI: 10.4313/teem.2010.11.3.093